MMBTSC3356 for microwave low noise amplifier at vhf, uhf and catv band the transistor is subdivi ded into three groups, q, r and s, according to its dc current gain. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 20 v collector emitter voltage v ceo 12 v emitter base voltage v ebo 3 v collector current i c 100 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s - 65 to + 150 o c characteristics (t a = 25 o c) parameter symbol min. typ. max. unit dc current gain at v ce = 10 v, i c = 20 ma current gain group q r s h fe h fe h fe 50 80 125 - - - 100 160 250 - - - collector cutoff current at v cb = 10 v i cbo - - 1 a emitter cutoff current at v eb = 1 v i ebo - - 1 a gain bandwidth product at v ce = 10 v, i c = 20 ma f t - 7 - ghz feed-back capacitance at v cb = 10 v, f = 1 mhz c re 1) - 0.55 1 pf noise figure at v ce = 10 v, i c = 7 ma, f = 1 ghz nf - 1.1 2 db 1) the emitter terminal and the case shall be connected to t he guard terminal of the three-terminal capacitance bridge. sot-23 plastic package 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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